Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides
Layered metal sulfides (MS) 1+x (TiS 2 ) 2 ( M =Pb, Sn, Bi) with alternative stacking of MS layers and TiS 2 layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translationa...
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| Veröffentlicht in: | Applied physics letters 2012-03, Vol.100 (10), p.101913-101913-4 |
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| creator | Wan, Chunlei Wang, Yifeng Norimatsu, Wataru Kusunoki, Michiko Koumoto, Kunihito |
| description | Layered metal sulfides (MS)
1+x
(TiS
2
)
2
(
M
=Pb, Sn, Bi) with alternative stacking of MS layers and TiS
2
layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS)
1.2
(TiS
2
)
2
and the staging disorder in (BiS)
1.2
(TiS
2
)
2
. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a "phonon-blocking, electron-transmitting" scenario. |
| doi_str_mv | 10.1063/1.3691887 |
| format | Article |
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1+x
(TiS
2
)
2
(
M
=Pb, Sn, Bi) with alternative stacking of MS layers and TiS
2
layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS)
1.2
(TiS
2
)
2
and the staging disorder in (BiS)
1.2
(TiS
2
)
2
. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a "phonon-blocking, electron-transmitting" scenario.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3691887</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2012-03, Vol.100 (10), p.101913-101913-4</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-6b796197b9434bef0d35a87e43e2313f485c170d928e79d02d02ca5f79b0be83</citedby><cites>FETCH-LOGICAL-c350t-6b796197b9434bef0d35a87e43e2313f485c170d928e79d02d02ca5f79b0be83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3691887$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Wan, Chunlei</creatorcontrib><creatorcontrib>Wang, Yifeng</creatorcontrib><creatorcontrib>Norimatsu, Wataru</creatorcontrib><creatorcontrib>Kusunoki, Michiko</creatorcontrib><creatorcontrib>Koumoto, Kunihito</creatorcontrib><title>Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides</title><title>Applied physics letters</title><description>Layered metal sulfides (MS)
1+x
(TiS
2
)
2
(
M
=Pb, Sn, Bi) with alternative stacking of MS layers and TiS
2
layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS)
1.2
(TiS
2
)
2
and the staging disorder in (BiS)
1.2
(TiS
2
)
2
. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a "phonon-blocking, electron-transmitting" scenario.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK4e_Ae5euiadNomuQiy-AWLXvYe0nSi0WwrSarsv7fLrt6EgZd5eWYODyGXnC04a-CaL6BRXEpxRGacCVEA5_KYzBhjUDSq5qfkLKX3aa1LgBmxz6YfkjUBacrGfvj-lTozhpyo77vRYkfD8E3zG8aNCdQOuzL7L5-3E7DvBwxoc_SWBrPFOJ1sME9wGoPzHaZzcuJMSHhxyDlZ39-tl4_F6uXhaXm7KizULBdNK1TDlWhVBVWLjnVQGymwAiyBg6tkbblgnSolCtWxchpraidUy1qUMCdX-7c2DilFdPoz-o2JW82Z3snRXB_kTOzNnk3WZ5P90P8P_xnSv4a0gx-mDm4Y</recordid><startdate>20120305</startdate><enddate>20120305</enddate><creator>Wan, Chunlei</creator><creator>Wang, Yifeng</creator><creator>Norimatsu, Wataru</creator><creator>Kusunoki, Michiko</creator><creator>Koumoto, Kunihito</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120305</creationdate><title>Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides</title><author>Wan, Chunlei ; Wang, Yifeng ; Norimatsu, Wataru ; Kusunoki, Michiko ; Koumoto, Kunihito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-6b796197b9434bef0d35a87e43e2313f485c170d928e79d02d02ca5f79b0be83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wan, Chunlei</creatorcontrib><creatorcontrib>Wang, Yifeng</creatorcontrib><creatorcontrib>Norimatsu, Wataru</creatorcontrib><creatorcontrib>Kusunoki, Michiko</creatorcontrib><creatorcontrib>Koumoto, Kunihito</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wan, Chunlei</au><au>Wang, Yifeng</au><au>Norimatsu, Wataru</au><au>Kusunoki, Michiko</au><au>Koumoto, Kunihito</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides</atitle><jtitle>Applied physics letters</jtitle><date>2012-03-05</date><risdate>2012</risdate><volume>100</volume><issue>10</issue><spage>101913</spage><epage>101913-4</epage><pages>101913-101913-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Layered metal sulfides (MS)
1+x
(TiS
2
)
2
(
M
=Pb, Sn, Bi) with alternative stacking of MS layers and TiS
2
layers (a natural superlattice) have been proposed as thermoelectric materials. In this paper, various nanoscale stacking faults have been found in these materials, including the translational disorder in (SnS)
1.2
(TiS
2
)
2
and the staging disorder in (BiS)
1.2
(TiS
2
)
2
. The lattice thermal conductivities along the layers are systematically and significantly reduced by these stacking faults which are only a few unit cells apart, without deteriorating the electron mobility, demonstrating a "phonon-blocking, electron-transmitting" scenario.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3691887</doi></addata></record> |
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| ispartof | Applied physics letters, 2012-03, Vol.100 (10), p.101913-101913-4 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3691887 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides |
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