Electrical and optical properties of light-emitting p–i–n diodes on diamond

Electrical and optical properties of light-emitting p–i–n diodes made on natural and synthetic single-crystal diamonds were studied at temperatures up to 500 °C. The diodes were fabricated by boron (p-type doping) and lithium or phosphorous (n-type doping) ion implantation in the form of two adjacen...

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Veröffentlicht in:	Journal of applied physics 1998-12, Vol.84 (11), p.6127-6134
Hauptverfasser:	Melnikov, A. A., Denisenko, A. V., Zaitsev, A. M., Shulenkov, A., Varichenko, V. S., Filipp, A. R., Dravin, V. A., Kanda, H., Fahrner, W. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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