Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses
A model for the growth of a conducting filament in metal-to-metal amorphous-silicon antifuses is presented. The transition from a high-resistance state to a low-resistance one is initiated by the formation of a localized hot spot. The growth of the filament occurs by melting the surrounding amorphou...
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| Veröffentlicht in: | Journal of applied physics 1998-11, Vol.84 (9), p.4979-4983 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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