Bonding at the CdSe/SiOx (x=0,1,2) interfaces

The chemistry occurring at the CdSe/Si, CdSe/SiO, and CdSe/SiO2 interfaces was investigated by looking at very thin tapered films (0–10 nm) of thermally evaporated CdSe with x-ray photoelectron spectroscopy. The analysis of the attenuation of the x-ray photoelectron signals along the tapered film wa...

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Veröffentlicht in:	Journal of applied physics 1998-11, Vol.84 (9), p.4911-4920
Hauptverfasser:	Masson, D. P., Landheer, D., Quance, T., Hulse, J. E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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