Planar quantum transistor based on 2D–2D tunneling in double quantum well heterostructures

We report on our work on the double electron layer tunneling transistor (DELTT), based on the gate control of two-dimensional–two-dimensional (2D–2D) tunneling in a double quantum well heterostructure. While previous quantum transistors have typically required tiny laterally defined features, by con...

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Veröffentlicht in:	Journal of Applied Physics 1998-11, Vol.84 (10), p.5626-5634
Hauptverfasser:	Simmons, J. A., Blount, M. A., Moon, J. S., Lyo, S. K., Baca, W. E., Wendt, J. R., Reno, J. L., Hafich, M. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	ENGINEERING NOT INCLUDED IN OTHER CATEGORIES HETEROJUNCTIONS JUNCTION TRANSISTORS MEMORY DEVICES OPERATION RESONANCE TUNNEL EFFECT
Online-Zugang:	Volltext
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