Back-channel-oxidized a-Si:H thin-film transistors
We have developed a back-channel-oxidized thin-film transistor (TFT) structure which does not require the conventional etching of the n+-a-Si:H layer from the channel region. Key processes in the fabrication of this structure are the deposition of a very thin (less than 10 nm) n+-a-Si:H layer with l...
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| Veröffentlicht in: | Journal of applied physics 1998-10, Vol.84 (7), p.3993-3999 |
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| container_end_page | 3999 |
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| container_issue | 7 |
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| container_title | Journal of applied physics |
| container_volume | 84 |
| creator | Takechi, Kazushige Hirano, Naoto Hayama, Hiroshi Kaneko, Setsuo |
| description | We have developed a back-channel-oxidized thin-film transistor (TFT) structure which does not require the conventional etching of the n+-a-Si:H layer from the channel region. Key processes in the fabrication of this structure are the deposition of a very thin (less than 10 nm) n+-a-Si:H layer with low resistivity (∼50 Ω cm), and an oxygen plasma treatment to change the n+-a-Si:H layer above the channel region into dielectric oxide. With a thin (∼50 nm) a-Si:H layer, the back-channel-oxidized TFT structure makes it possible to obtain much better “ON” characteristics than are obtained with conventional channel-etched TFTs. To gain insight into the underlying physical mechanism we investigated the back-channel electrical characteristics of both types of TFTs as a function of temperature, and found that back-channel-oxidized TFTs had much better back-channel characteristics than channel-etched TFTs, which is due to a lower density of back-channel interface states. |
| doi_str_mv | 10.1063/1.368579 |
| format | Article |
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To gain insight into the underlying physical mechanism we investigated the back-channel electrical characteristics of both types of TFTs as a function of temperature, and found that back-channel-oxidized TFTs had much better back-channel characteristics than channel-etched TFTs, which is due to a lower density of back-channel interface states.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.368579</identifier><language>eng</language><ispartof>Journal of applied physics, 1998-10, Vol.84 (7), p.3993-3999</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-a1570e7e72a586efde7ab82b5e98a3011fd46bd0a0bad6e2ae9c03efaf17f7bd3</citedby><cites>FETCH-LOGICAL-c325t-a1570e7e72a586efde7ab82b5e98a3011fd46bd0a0bad6e2ae9c03efaf17f7bd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Takechi, Kazushige</creatorcontrib><creatorcontrib>Hirano, Naoto</creatorcontrib><creatorcontrib>Hayama, Hiroshi</creatorcontrib><creatorcontrib>Kaneko, Setsuo</creatorcontrib><title>Back-channel-oxidized a-Si:H thin-film transistors</title><title>Journal of applied physics</title><description>We have developed a back-channel-oxidized thin-film transistor (TFT) structure which does not require the conventional etching of the n+-a-Si:H layer from the channel region. 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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1998-10, Vol.84 (7), p.3993-3999 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| title | Back-channel-oxidized a-Si:H thin-film transistors |
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