Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide

4H- SiC epitaxial layers were implanted with nitrogen up to doses of 1×1015 cm−2 and annealed at different temperatures. Atomic force microscopy revealed that the roughness of the SiC surface increased with the annealing temperature. It was shown that the oxide grows thicker on substrates with dopin...

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Veröffentlicht in:	Journal of applied physics 1998-09, Vol.84 (5), p.2943-2948
Hauptverfasser:	Treu, M., Burte, E. P., Schörner, R., Friedrichs, P., Stephani, D., Ryssel, H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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