Electrical characterization of He-plasma processed n-GaAs

We employed capacitance-voltage (C–V) measurements to determine the free-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the electrical properties of the plasma-induced defects. C–V measurements indicated that He-plasma processing resulted in a strong carrier reduction up to 1 μm below the GaAs surface. DLTS showed that He-ion processing introduced several prominent defects, including the frequently studied radiation-induced defects E1 and E2, associated with VAs. Current-voltage measurements demonstrated that the He-plasma processing inhibits the fabrication of high barrier Schottky diodes on n-GaAs.