Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates

Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates

We report a conductivity type conversion of ZnO films from n to p-type for films grown on silicon (100) substrates by pulsed laser deposition under low constant oxygen overpressure. Conductivity conversion is attributed to a competition between donor and acceptor-like native defects correlating with...

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Veröffentlicht in:Applied physics letters 2012-01, Vol.100 (5), p.053505-053505-4
Hauptverfasser: Esmaili-Sardari, Saeed, Berkovich, Andrew, Iliadis, Agis A.
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Berkovich, Andrew
Iliadis, Agis A.
description We report a conductivity type conversion of ZnO films from n to p-type for films grown on silicon (100) substrates by pulsed laser deposition under low constant oxygen overpressure. Conductivity conversion is attributed to a competition between donor and acceptor-like native defects correlating with growth conditions and surface differences between phosphorus doped n-type and boron doped p-Si substrates. Effects of growth temperature on intrinsic defects including oxygen vacancies, zinc vacancies and hydrogen impurity contamination are discussed. Our results show that the interplay of defect-related centers is critical to the electrical behavior and conductivity type of ZnO grown on Si substrates.
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title Observation of conductivity type conversion in undoped ZnO films grown by pulsed laser deposition on silicon (100) substrates
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