Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

Photoluminescence (PL) investigation was carried out on GaInP/GaAs multiple quantum wells structures grown on (001) and (311) B surfaces of GaAs by gas source molecular beam epitaxy. Superlattice structures of GaAs/GaInP grown on (001) GaAs substrate were also studied in comparison. Deep-level lumin...

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Veröffentlicht in:	Journal of applied physics 1998-06, Vol.83 (12), p.7900-7902
Hauptverfasser:	Li, Xiaobing, Sun, Dianzhao, Dong, Jianrong, Li, Jianping, Kong, Meiying, Yoon, S. F.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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