Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum effic...

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Veröffentlicht in:Applied physics letters 2012-01, Vol.100 (3), p.031112-031112-3
Hauptverfasser: Kuo, Yen-Kuang, Wang, Tsun-Hsin, Chang, Jih-Yuan
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Wang, Tsun-Hsin
Chang, Jih-Yuan
description Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN-InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.
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The simulation results suggest that the blue InGaN/InGaN-AlGaN-InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3678341</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2012-01, Vol.100 (3), p.031112-031112-3</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-2787058c5924b7989abccbe29a5302d2a476d607091d542f201ead79920d8b513</citedby><cites>FETCH-LOGICAL-c284t-2787058c5924b7989abccbe29a5302d2a476d607091d542f201ead79920d8b513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3678341$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Kuo, Yen-Kuang</creatorcontrib><creatorcontrib>Wang, Tsun-Hsin</creatorcontrib><creatorcontrib>Chang, Jih-Yuan</creatorcontrib><title>Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers</title><title>Applied physics letters</title><description>Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. 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title Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers
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