Dry-etching damage to magnetic anisotropy of Co-Pt dot arrays characterized using anomalous Hall effect
Using high-resolution e-beam lithography and ion beam etching, dot arrays were formed from Co-Pt alloy films with perpendicular magnetization. Dry-etching damage to uniaxial magnetic anisotropy K u of the fabricated dot arrays was examined. Hcp-Co 75 Pt 25 films and L 1 1 -type Co 50 Pt 50 -ordered...
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| Veröffentlicht in: | Journal of applied physics 2012-04, Vol.111 (7), p.07B908-07B908-3 |
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| container_title | Journal of applied physics |
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| creator | Shimatsu, T. Kataoka, H. Mitsuzuka, K. Aoi, H. Kikuchi, N. Kitakami, O. |
| description | Using high-resolution e-beam lithography and ion beam etching, dot arrays were formed from Co-Pt alloy films with perpendicular magnetization. Dry-etching damage to uniaxial magnetic anisotropy
K
u
of the fabricated dot arrays was examined. Hcp-Co
75
Pt
25
films and
L
1
1
-type Co
50
Pt
50
-ordered alloy films with film thickness δ of 3, 5, and 10 nm were used for this study. Dot diameter
D
was varied from 10 nm to 400 nm. The effective magnetic anisotropy of the dots,
K
u
eff
, was measured using the generalized Sucksmith-Thompson method with anomalous Hall effect (AHE) and an averaged AHE signal over 100-71,000 dots. By compensating the dot shape anisotropy,
K
u
was calculated from
K
u
eff
. The
K
u
for a dot array of
D
= 400 nm was almost equal to that for an original continuous film, but
K
u
decreased gradually for
D |
| doi_str_mv | 10.1063/1.3676061 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3676061</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-a9a6a3580d3f765c73cab14a0950c35eaba0336ff3ef96962830b4f7eb92b8003</originalsourceid><addsrcrecordid>eNp10LFOwzAUhWELgUQpDLyBVwaX67hx4gUJFUqRKsEAs3Xj2K1RGle2O4SnJ1W7Mp3l1xk-Qu45zDhI8chnQlYSJL8gEw61YlVZwiWZABSc1apS1-QmpR8AzmuhJmTzEgdms9n6fkNb3OHG0hzouL3N3lDsfQo5hv1Ag6OLwD4zbUOmGCMOiZotRjTZRv9rW3pIxxfsww67cEh0hV1HrXPW5Fty5bBL9u68U_K9fP1arNj64-198bxmRpSQGSqUKMoaWuEqWZpKGGz4HEGVMBYWGwQhpHPCOiWVLGoBzdxVtlFFUwOIKXk4_ZoYUorW6X30O4yD5qCPQprrs9DYPp3aZHzG7EP_fzwy6TOTPjHpLP4ADSRu3g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dry-etching damage to magnetic anisotropy of Co-Pt dot arrays characterized using anomalous Hall effect</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Shimatsu, T. ; Kataoka, H. ; Mitsuzuka, K. ; Aoi, H. ; Kikuchi, N. ; Kitakami, O.</creator><creatorcontrib>Shimatsu, T. ; Kataoka, H. ; Mitsuzuka, K. ; Aoi, H. ; Kikuchi, N. ; Kitakami, O.</creatorcontrib><description>Using high-resolution e-beam lithography and ion beam etching, dot arrays were formed from Co-Pt alloy films with perpendicular magnetization. Dry-etching damage to uniaxial magnetic anisotropy
K
u
of the fabricated dot arrays was examined. Hcp-Co
75
Pt
25
films and
L
1
1
-type Co
50
Pt
50
-ordered alloy films with film thickness δ of 3, 5, and 10 nm were used for this study. Dot diameter
D
was varied from 10 nm to 400 nm. The effective magnetic anisotropy of the dots,
K
u
eff
, was measured using the generalized Sucksmith-Thompson method with anomalous Hall effect (AHE) and an averaged AHE signal over 100-71,000 dots. By compensating the dot shape anisotropy,
K
u
was calculated from
K
u
eff
. The
K
u
for a dot array of
D
= 400 nm was almost equal to that for an original continuous film, but
K
u
decreased gradually for
D
<30 nm. The circumferential area (periphery) of dots with width
W
D
was assumed to be damaged by etching. The damaged area was inferred as
K
u
= 0 with original saturation magnetization
M
s
. The
W
D
values, as estimated using experimental data, were 1.6-1.8 nm for hcp-Co
75
Pt
25
dot arrays independent of δ (δ = 3-10 nm) and 1.8-1.9 nm for
L
1
1
-Co
50
Pt
50
dot arrays (δ = 3-5 nm). For all dot arrays,
K
u
at
D
= 10 nm were nearly half those for the original continuous films, suggesting that films having
K
u
of twice that for original films were necessary to overcome
K
u
reduction by etching damage.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3676061</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2012-04, Vol.111 (7), p.07B908-07B908-3</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-a9a6a3580d3f765c73cab14a0950c35eaba0336ff3ef96962830b4f7eb92b8003</citedby><cites>FETCH-LOGICAL-c350t-a9a6a3580d3f765c73cab14a0950c35eaba0336ff3ef96962830b4f7eb92b8003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3676061$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76353,76359</link.rule.ids></links><search><creatorcontrib>Shimatsu, T.</creatorcontrib><creatorcontrib>Kataoka, H.</creatorcontrib><creatorcontrib>Mitsuzuka, K.</creatorcontrib><creatorcontrib>Aoi, H.</creatorcontrib><creatorcontrib>Kikuchi, N.</creatorcontrib><creatorcontrib>Kitakami, O.</creatorcontrib><title>Dry-etching damage to magnetic anisotropy of Co-Pt dot arrays characterized using anomalous Hall effect</title><title>Journal of applied physics</title><description>Using high-resolution e-beam lithography and ion beam etching, dot arrays were formed from Co-Pt alloy films with perpendicular magnetization. Dry-etching damage to uniaxial magnetic anisotropy
K
u
of the fabricated dot arrays was examined. Hcp-Co
75
Pt
25
films and
L
1
1
-type Co
50
Pt
50
-ordered alloy films with film thickness δ of 3, 5, and 10 nm were used for this study. Dot diameter
D
was varied from 10 nm to 400 nm. The effective magnetic anisotropy of the dots,
K
u
eff
, was measured using the generalized Sucksmith-Thompson method with anomalous Hall effect (AHE) and an averaged AHE signal over 100-71,000 dots. By compensating the dot shape anisotropy,
K
u
was calculated from
K
u
eff
. The
K
u
for a dot array of
D
= 400 nm was almost equal to that for an original continuous film, but
K
u
decreased gradually for
D
<30 nm. The circumferential area (periphery) of dots with width
W
D
was assumed to be damaged by etching. The damaged area was inferred as
K
u
= 0 with original saturation magnetization
M
s
. The
W
D
values, as estimated using experimental data, were 1.6-1.8 nm for hcp-Co
75
Pt
25
dot arrays independent of δ (δ = 3-10 nm) and 1.8-1.9 nm for
L
1
1
-Co
50
Pt
50
dot arrays (δ = 3-5 nm). For all dot arrays,
K
u
at
D
= 10 nm were nearly half those for the original continuous films, suggesting that films having
K
u
of twice that for original films were necessary to overcome
K
u
reduction by etching damage.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp10LFOwzAUhWELgUQpDLyBVwaX67hx4gUJFUqRKsEAs3Xj2K1RGle2O4SnJ1W7Mp3l1xk-Qu45zDhI8chnQlYSJL8gEw61YlVZwiWZABSc1apS1-QmpR8AzmuhJmTzEgdms9n6fkNb3OHG0hzouL3N3lDsfQo5hv1Ag6OLwD4zbUOmGCMOiZotRjTZRv9rW3pIxxfsww67cEh0hV1HrXPW5Fty5bBL9u68U_K9fP1arNj64-198bxmRpSQGSqUKMoaWuEqWZpKGGz4HEGVMBYWGwQhpHPCOiWVLGoBzdxVtlFFUwOIKXk4_ZoYUorW6X30O4yD5qCPQprrs9DYPp3aZHzG7EP_fzwy6TOTPjHpLP4ADSRu3g</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>Shimatsu, T.</creator><creator>Kataoka, H.</creator><creator>Mitsuzuka, K.</creator><creator>Aoi, H.</creator><creator>Kikuchi, N.</creator><creator>Kitakami, O.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120401</creationdate><title>Dry-etching damage to magnetic anisotropy of Co-Pt dot arrays characterized using anomalous Hall effect</title><author>Shimatsu, T. ; Kataoka, H. ; Mitsuzuka, K. ; Aoi, H. ; Kikuchi, N. ; Kitakami, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-a9a6a3580d3f765c73cab14a0950c35eaba0336ff3ef96962830b4f7eb92b8003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shimatsu, T.</creatorcontrib><creatorcontrib>Kataoka, H.</creatorcontrib><creatorcontrib>Mitsuzuka, K.</creatorcontrib><creatorcontrib>Aoi, H.</creatorcontrib><creatorcontrib>Kikuchi, N.</creatorcontrib><creatorcontrib>Kitakami, O.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shimatsu, T.</au><au>Kataoka, H.</au><au>Mitsuzuka, K.</au><au>Aoi, H.</au><au>Kikuchi, N.</au><au>Kitakami, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dry-etching damage to magnetic anisotropy of Co-Pt dot arrays characterized using anomalous Hall effect</atitle><jtitle>Journal of applied physics</jtitle><date>2012-04-01</date><risdate>2012</risdate><volume>111</volume><issue>7</issue><spage>07B908</spage><epage>07B908-3</epage><pages>07B908-07B908-3</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Using high-resolution e-beam lithography and ion beam etching, dot arrays were formed from Co-Pt alloy films with perpendicular magnetization. Dry-etching damage to uniaxial magnetic anisotropy
K
u
of the fabricated dot arrays was examined. Hcp-Co
75
Pt
25
films and
L
1
1
-type Co
50
Pt
50
-ordered alloy films with film thickness δ of 3, 5, and 10 nm were used for this study. Dot diameter
D
was varied from 10 nm to 400 nm. The effective magnetic anisotropy of the dots,
K
u
eff
, was measured using the generalized Sucksmith-Thompson method with anomalous Hall effect (AHE) and an averaged AHE signal over 100-71,000 dots. By compensating the dot shape anisotropy,
K
u
was calculated from
K
u
eff
. The
K
u
for a dot array of
D
= 400 nm was almost equal to that for an original continuous film, but
K
u
decreased gradually for
D
<30 nm. The circumferential area (periphery) of dots with width
W
D
was assumed to be damaged by etching. The damaged area was inferred as
K
u
= 0 with original saturation magnetization
M
s
. The
W
D
values, as estimated using experimental data, were 1.6-1.8 nm for hcp-Co
75
Pt
25
dot arrays independent of δ (δ = 3-10 nm) and 1.8-1.9 nm for
L
1
1
-Co
50
Pt
50
dot arrays (δ = 3-5 nm). For all dot arrays,
K
u
at
D
= 10 nm were nearly half those for the original continuous films, suggesting that films having
K
u
of twice that for original films were necessary to overcome
K
u
reduction by etching damage.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3676061</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2012-04, Vol.111 (7), p.07B908-07B908-3 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3676061 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Dry-etching damage to magnetic anisotropy of Co-Pt dot arrays characterized using anomalous Hall effect |
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