Further analysis of space-charge-limited currents in polybenzo[c]thiophene films
The temperature dependence of space-charge-limited currents in polybenzo[c]thiophene (PBCT) films in a sandwich structure of aluminum/PBCT/indium–tin–oxide is presented. Free carrier space-charge-limited currents are identified and the free carrier mobility has been estimated to be ∼3×10−5 cm2 V−1 s...
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Veröffentlicht in: | Journal of applied physics 1998-05, Vol.83 (10), p.5558-5560 |
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creator | Musa, I. Eccleston, W. Higgins, S. J. |
description | The temperature dependence of space-charge-limited currents in polybenzo[c]thiophene (PBCT) films in a sandwich structure of aluminum/PBCT/indium–tin–oxide is presented. Free carrier space-charge-limited currents are identified and the free carrier mobility has been estimated to be ∼3×10−5 cm2 V−1 s−1. A trap of concentration ∼1.8×1017 cm−3 and energy ∼0.67 eV from the highest occupied molecular orbital level is estimated. The thickness dependence of the current, at constant voltage, is very close to that expected for a space-charge-limited mechanism. The Tauc band gap determined by optical spectrophotometry was found to be ∼1.34 eV. |
doi_str_mv | 10.1063/1.367497 |
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J.</creatorcontrib><title>Further analysis of space-charge-limited currents in polybenzo[c]thiophene films</title><title>Journal of applied physics</title><description>The temperature dependence of space-charge-limited currents in polybenzo[c]thiophene (PBCT) films in a sandwich structure of aluminum/PBCT/indium–tin–oxide is presented. Free carrier space-charge-limited currents are identified and the free carrier mobility has been estimated to be ∼3×10−5 cm2 V−1 s−1. A trap of concentration ∼1.8×1017 cm−3 and energy ∼0.67 eV from the highest occupied molecular orbital level is estimated. The thickness dependence of the current, at constant voltage, is very close to that expected for a space-charge-limited mechanism. 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J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Further analysis of space-charge-limited currents in polybenzo[c]thiophene films</atitle><jtitle>Journal of applied physics</jtitle><date>1998-05-15</date><risdate>1998</risdate><volume>83</volume><issue>10</issue><spage>5558</spage><epage>5560</epage><pages>5558-5560</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The temperature dependence of space-charge-limited currents in polybenzo[c]thiophene (PBCT) films in a sandwich structure of aluminum/PBCT/indium–tin–oxide is presented. Free carrier space-charge-limited currents are identified and the free carrier mobility has been estimated to be ∼3×10−5 cm2 V−1 s−1. A trap of concentration ∼1.8×1017 cm−3 and energy ∼0.67 eV from the highest occupied molecular orbital level is estimated. The thickness dependence of the current, at constant voltage, is very close to that expected for a space-charge-limited mechanism. The Tauc band gap determined by optical spectrophotometry was found to be ∼1.34 eV.</abstract><doi>10.1063/1.367497</doi><tpages>3</tpages></addata></record> |
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title | Further analysis of space-charge-limited currents in polybenzo[c]thiophene films |
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