Frequency dependence of photoresist ashing with dielectric barrier discharges in oxygen

This article presents results of the frequency dependence on surface etching of a Novolak-type polymer (Shipley, SPR2) on Si wafers using dielectric barrier discharges in oxygen near atmospheric pressures and room temperature. The etching depth of the photoresist is measured by mechanical profilomet...

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Veröffentlicht in:	Journal of Applied Physics 1998-05, Vol.83 (10), p.5095-5101
1. Verfasser:	Falkenstein, Zoran
Format:	Artikel
Sprache:	eng
Schlagworte:	ATMOSPHERIC PRESSURE ELECTRIC DISCHARGES ETCHING FREQUENCY DEPENDENCE MATERIALS SCIENCE OXYGEN PLASMA POLYMERS SCANNING ELECTRON MICROSCOPY SILICON SURFACE TREATMENTS
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