Erbium in Si: Estimation of energy transfer rate and trap depth from temperature dependence of intra-4f-shell luminescence
We investigated the temperature dependence of erbium (Er) 4f-shell luminescence decay time and intensity in silicon based on a multiphonon-assisted energy transfer model, which has been verified for the Yb-doped InP system and has already been successfully applied to various rare-earth doped III–V s...
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| Veröffentlicht in: | Journal of applied physics 1998-03, Vol.83 (5), p.2800-2805 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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