Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films
An longitudinal-optic-phonon-plasmon coupled mode (LOPC) has been clearly observed by Raman scattering in n-type Al x Ga 1− x N films with x ∼0.67 and different carrier densities n =1 × 10 17 -9 × 10 17 cm −3 . The A 1 -LO-phonon mode showed a systematic frequency shift and broadening with increasin...
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Veröffentlicht in: | Applied physics letters 2011-12, Vol.99 (25), p.251904-251904-4 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | An longitudinal-optic-phonon-plasmon coupled mode (LOPC) has been clearly observed by Raman scattering in n-type Al
x
Ga
1−
x
N films with
x
∼0.67 and different carrier densities
n
=1 × 10
17
-9 × 10
17
cm
−3
. The A
1
-LO-phonon mode showed a systematic frequency shift and broadening with increasing
n
. This is a characteristic behavior of LOPC as previously observed in n-type binary semiconductors. A theoretical line-shape fitting analysis was conducted for the LOPC profile using
n
and plasmon-damping rate as adjustable parameter. Assuming
m
*
/m
0
=0.28 for the longitudinal effective mass of electron, the analysis well reproduced carrier density and mobility deduced by Hall measurement. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3670338 |