A proposed TlGaAs/AlGaAs pseudomorphic heterostructure field effect transistor

A new heterostructure field effect transistor is proposed consisting of a pseudomorphic TlGaAs channel combined with an AlGaAs charge supply layer, the whole structure grown on a GaAs substrate. The properties of TlGaAs from previously published calculations and some simple scaling rules for the eff...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1998-03, Vol.83 (5), p.2599-2603
Hauptverfasser:	Svensson, Stefan P., Crowne, Frank J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!