Surface dopant concentration monitoring using noncontact surface charge profiling

This study is concerned with variations of the concentration of active boron dopant in the near surface region of silicon wafers. Boron can be deactivated by pairing with hydrogen or metals, particularly Cu and Fe, all of which may originate from the surface polishing process. The temperature depend...

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Veröffentlicht in:	Journal of applied physics 1998-02, Vol.83 (4), p.2297-2300
Hauptverfasser:	Roman, P., Staffa, J., Fakhouri, S., Brubaker, M., Ruzyllo, J., Torek, K., Kamieniecki, E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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