Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor system

For tantalum pentoxide capacitors in 1 Gbit dynamic random access memory, titanium nitride is adopted as the top electrode. After postannealing at temperatures higher than 750 °C, the capacitance of Ta2O5 reduces due to an interfacial reaction between TiN and Ta2O5. This was studied by high resoluti...

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Veröffentlicht in:	Journal of applied physics 1998-01, Vol.83 (1), p.139-144
Hauptverfasser:	Lee, Hoo-Jeong, Sinclair, Robert, Lee, Myeong-Bum, Lee, Hyeon-Deok
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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