Excimer laser irradiation of Si3N4 films deposited on Si

We have investigated the effect of argon excimer laser irradiation of silicon nitride films deposited on silicon substrates. When the film thickness is equal to or greater than 40 nm, the irradiation induces amorphous silicon precipitation near the thin surface layer of the film, which has been clar...

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Veröffentlicht in:	Journal of applied physics 1998-04, Vol.83 (7), p.3556-3559
Hauptverfasser:	Ohmukai, Masato, Takigawa, Yasuo, Kurosawa, Kou
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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