Excimer laser irradiation of Si3N4 films deposited on Si

Excimer laser irradiation of Si3N4 films deposited on Si

We have investigated the effect of argon excimer laser irradiation of silicon nitride films deposited on silicon substrates. When the film thickness is equal to or greater than 40 nm, the irradiation induces amorphous silicon precipitation near the thin surface layer of the film, which has been clar...

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Veröffentlicht in:Journal of applied physics 1998-04, Vol.83 (7), p.3556-3559
Hauptverfasser: Ohmukai, Masato, Takigawa, Yasuo, Kurosawa, Kou
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container_title Journal of applied physics
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creator Ohmukai, Masato
Takigawa, Yasuo
Kurosawa, Kou
description We have investigated the effect of argon excimer laser irradiation of silicon nitride films deposited on silicon substrates. When the film thickness is equal to or greater than 40 nm, the irradiation induces amorphous silicon precipitation near the thin surface layer of the film, which has been clarified by means of x-ray photoelectron and Raman spectroscopy. The formation mechanism of amorphous silicon with the irradiation is discussed. The phase of silicon precipitation depends on the thermal properties of the substrate material.
doi_str_mv 10.1063/1.366571
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title Excimer laser irradiation of Si3N4 films deposited on Si
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