Aging behavior of photoluminescence in porous silicon

Aging behavior of photoluminescence in porous silicon

The aging phenomena of porous silicon (PS) over a 192 day time span have been studied using photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. As-prepared PS exhibits red PL peaking near 650 nm. The PL intensity increases with time to...

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Veröffentlicht in:Journal of applied physics 1997-12, Vol.82 (11), p.5718-5721
Hauptverfasser: Fukuda, Yoshio, Furuya, Kazuo, Ishikawa, Nobuhiro, Saito, Tetsuya
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container_end_page 5721
container_issue 11
container_start_page 5718
container_title Journal of applied physics
container_volume 82
creator Fukuda, Yoshio
Furuya, Kazuo
Ishikawa, Nobuhiro
Saito, Tetsuya
description The aging phenomena of porous silicon (PS) over a 192 day time span have been studied using photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. As-prepared PS exhibits red PL peaking near 650 nm. The PL intensity increases with time to some equilibrium value. The PL peak shows no blueshift during aging. Infrared analysis reveals that the Si–O bond content in PS increases with time and correlates to the PL intensity. The PL lifetime increases with aging and its values range from 3 to 37 μs. Transmission electron microscopic observations indicate the presence of Si nanoparticles and amorphous substances in the PS layer. These results suggest that the PL from aged PS might be attributed to the combined effects of quantum confinement in Si nanoparticles and some defect in Si oxide covering the nanoparticles.
doi_str_mv 10.1063/1.366435
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_366435</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_366435</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-ba7f8c8df45824cbbc03033f2a2a406d3ae02aceca0efd588d0263625dc4c65c3</originalsourceid><addsrcrecordid>eNotz09LwzAYgPEgDqyb4EfI0Uvnm7xNmh7H8B8MvOi5pG-SLdI1JdkEv73IPD23B36M3QtYC9D4KNaodYPqilUCTFe3SsE1qwCkqE3XdjfstpQvACEMdhVTm32c9nzwB_sdU-Yp8PmQTmk8H-PkC_mJPI8Tn1NO58JLHCOlacUWwY7F3_13yT6fnz62r_Xu_eVtu9nVJDtxqgfbBkPGhUYZ2dAwECAgBmmlbUA7tB6kJU8WfHDKGAdSo5bKUUNaES7Zw-VLOZWSfejnHI82__QC-j9uL_oLF38BVOtHrA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Aging behavior of photoluminescence in porous silicon</title><source>AIP Digital Archive</source><creator>Fukuda, Yoshio ; Furuya, Kazuo ; Ishikawa, Nobuhiro ; Saito, Tetsuya</creator><creatorcontrib>Fukuda, Yoshio ; Furuya, Kazuo ; Ishikawa, Nobuhiro ; Saito, Tetsuya</creatorcontrib><description>The aging phenomena of porous silicon (PS) over a 192 day time span have been studied using photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. As-prepared PS exhibits red PL peaking near 650 nm. The PL intensity increases with time to some equilibrium value. The PL peak shows no blueshift during aging. Infrared analysis reveals that the Si–O bond content in PS increases with time and correlates to the PL intensity. The PL lifetime increases with aging and its values range from 3 to 37 μs. Transmission electron microscopic observations indicate the presence of Si nanoparticles and amorphous substances in the PS layer. These results suggest that the PL from aged PS might be attributed to the combined effects of quantum confinement in Si nanoparticles and some defect in Si oxide covering the nanoparticles.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.366435</identifier><language>eng</language><ispartof>Journal of applied physics, 1997-12, Vol.82 (11), p.5718-5721</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-ba7f8c8df45824cbbc03033f2a2a406d3ae02aceca0efd588d0263625dc4c65c3</citedby><cites>FETCH-LOGICAL-c291t-ba7f8c8df45824cbbc03033f2a2a406d3ae02aceca0efd588d0263625dc4c65c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Fukuda, Yoshio</creatorcontrib><creatorcontrib>Furuya, Kazuo</creatorcontrib><creatorcontrib>Ishikawa, Nobuhiro</creatorcontrib><creatorcontrib>Saito, Tetsuya</creatorcontrib><title>Aging behavior of photoluminescence in porous silicon</title><title>Journal of applied physics</title><description>The aging phenomena of porous silicon (PS) over a 192 day time span have been studied using photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. As-prepared PS exhibits red PL peaking near 650 nm. The PL intensity increases with time to some equilibrium value. The PL peak shows no blueshift during aging. Infrared analysis reveals that the Si–O bond content in PS increases with time and correlates to the PL intensity. The PL lifetime increases with aging and its values range from 3 to 37 μs. Transmission electron microscopic observations indicate the presence of Si nanoparticles and amorphous substances in the PS layer. These results suggest that the PL from aged PS might be attributed to the combined effects of quantum confinement in Si nanoparticles and some defect in Si oxide covering the nanoparticles.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotz09LwzAYgPEgDqyb4EfI0Uvnm7xNmh7H8B8MvOi5pG-SLdI1JdkEv73IPD23B36M3QtYC9D4KNaodYPqilUCTFe3SsE1qwCkqE3XdjfstpQvACEMdhVTm32c9nzwB_sdU-Yp8PmQTmk8H-PkC_mJPI8Tn1NO58JLHCOlacUWwY7F3_13yT6fnz62r_Xu_eVtu9nVJDtxqgfbBkPGhUYZ2dAwECAgBmmlbUA7tB6kJU8WfHDKGAdSo5bKUUNaES7Zw-VLOZWSfejnHI82__QC-j9uL_oLF38BVOtHrA</recordid><startdate>19971201</startdate><enddate>19971201</enddate><creator>Fukuda, Yoshio</creator><creator>Furuya, Kazuo</creator><creator>Ishikawa, Nobuhiro</creator><creator>Saito, Tetsuya</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19971201</creationdate><title>Aging behavior of photoluminescence in porous silicon</title><author>Fukuda, Yoshio ; Furuya, Kazuo ; Ishikawa, Nobuhiro ; Saito, Tetsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-ba7f8c8df45824cbbc03033f2a2a406d3ae02aceca0efd588d0263625dc4c65c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fukuda, Yoshio</creatorcontrib><creatorcontrib>Furuya, Kazuo</creatorcontrib><creatorcontrib>Ishikawa, Nobuhiro</creatorcontrib><creatorcontrib>Saito, Tetsuya</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fukuda, Yoshio</au><au>Furuya, Kazuo</au><au>Ishikawa, Nobuhiro</au><au>Saito, Tetsuya</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Aging behavior of photoluminescence in porous silicon</atitle><jtitle>Journal of applied physics</jtitle><date>1997-12-01</date><risdate>1997</risdate><volume>82</volume><issue>11</issue><spage>5718</spage><epage>5721</epage><pages>5718-5721</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The aging phenomena of porous silicon (PS) over a 192 day time span have been studied using photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. As-prepared PS exhibits red PL peaking near 650 nm. The PL intensity increases with time to some equilibrium value. The PL peak shows no blueshift during aging. Infrared analysis reveals that the Si–O bond content in PS increases with time and correlates to the PL intensity. The PL lifetime increases with aging and its values range from 3 to 37 μs. Transmission electron microscopic observations indicate the presence of Si nanoparticles and amorphous substances in the PS layer. These results suggest that the PL from aged PS might be attributed to the combined effects of quantum confinement in Si nanoparticles and some defect in Si oxide covering the nanoparticles.</abstract><doi>10.1063/1.366435</doi><tpages>4</tpages></addata></record>
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title Aging behavior of photoluminescence in porous silicon
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T10%3A49%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Aging%20behavior%20of%20photoluminescence%20in%20porous%20silicon&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Fukuda,%20Yoshio&rft.date=1997-12-01&rft.volume=82&rft.issue=11&rft.spage=5718&rft.epage=5721&rft.pages=5718-5721&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.366435&rft_dat=%3Ccrossref%3E10_1063_1_366435%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true