In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

In-well-pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a res...

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Veröffentlicht in:	Applied physics letters 2011-11, Vol.99 (20), p.201109-201109-3
Hauptverfasser:	Wunderer, Thomas, Northrup, John E., Yang, Zhihong, Teepe, Mark, Strittmatter, André, Johnson, Noble M., Rotella, Paul, Wraback, Michael
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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