Highly sensitive porous silicon based photodiode structures

Al/PS/c-Si photodiode structures were fabricated with a porous silicon (PS) layer of high porosity. Photosensitivity spectra, current–voltage (I–V) dependences at different temperatures, and electron beam induced current profiles were analyzed. Effects of annealing on the device characteristics were...

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Veröffentlicht in:	Journal of applied physics 1997-11, Vol.82 (9), p.4647-4650
Hauptverfasser:	Balagurov, L. A., Yarkin, D. G., Petrovicheva, G. A., Petrova, E. A., Orlov, A. F., Andryushin, S. Ya
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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