Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization

A novel tungsten nitride (WNx) film for diffusion barrier applications has been prepared by nitridation of a fine grain chemical vapor deposited tungsten (CVD-W) film. The fine grain CVD-W is deposited at 300 °C in a low pressure chemical vapor deposition reactor with a SiH4/WF6 flow rate of 12.5/5...

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Veröffentlicht in:	Journal of Applied Physics 1997-04, Vol.81 (8), p.3670-3676
Hauptverfasser:	Chang, Kow-Ming, Yeh, Ta-Hsun, Deng, I-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ANNEALING AUGER EFFECT CHEMICAL VAPOR DEPOSITION DIFFUSION BARRIERS GRAIN BOUNDARIES MASS SPECTRA MATERIALS SCIENCE NITRIDATION PHOTOELECTRON SPECTROSCOPY THIN FILMS TUNGSTEN COMPOUNDS TUNGSTEN NITRIDES
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