Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs

Electrolyte electroreflectance (EER) experiments were performed on In0.22Ga0.78As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation, and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces...

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Veröffentlicht in:	Journal of applied physics 1997-04, Vol.81 (8), p.3601-3606
Hauptverfasser:	Chattopadhyay, K., Aubel, J., Sundaram, S., Ehret, J. E., Kaspi, R., Evans, Keith R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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