Intrinsic and extrinsic dielectric responses of CaCu3Ti4O12 thin films

CaCu3Ti4O12 thin films were epitaxially grown on (001) LaAlO3 substrates by pulsed laser deposition under optimized growth conditions. The crystal structure and sample morphology were characterized by x-ray diffraction, AFM, TEM, ellipsometry, and Raman spectroscopy. The dielectric responses of the...

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Veröffentlicht in:Journal of applied physics 2011-10, Vol.110 (7)
Hauptverfasser: Rubinger, C. P. L., Moreira, R. L., Ribeiro, G. M., Matinaga, F. M., Autier Laurent, S., Mercey, B., Lobo, R. P. S. M.
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Sprache:eng
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Zusammenfassung:CaCu3Ti4O12 thin films were epitaxially grown on (001) LaAlO3 substrates by pulsed laser deposition under optimized growth conditions. The crystal structure and sample morphology were characterized by x-ray diffraction, AFM, TEM, ellipsometry, and Raman spectroscopy. The dielectric responses of the films were investigated in a large temperature range (5 to 375 K) by infrared reflectivity and impedance spectroscopies. The films exhibited a colossal dielectric response, with the dielectric permittivity reaching 104 at 100 Hz. The results obtained in a broad frequency range allowed us to investigate the behavior of intrinsic and extrinsic dielectric responses of this material. The room temperature centrosymmetrical cubic structure remains stable down to 5 K, though softening of the lower frequency infrared phonon modes indicates an incipient ferroelectric character. The radio frequency dielectric response reveals two relaxations of extrinsic origin, a primary higher frequency relaxation responsible for the colossal dielectric behavior and a secondary one of lower frequency. The activation energies of these processes are compatible with the presence of shallow defect levels created by oxygen vacancies.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3644962