The ambipolar Auger coefficient: Measured temperature dependence in electron irradiated and highly injected n-type silicon
From free-carrier absorption measurements of spatially and temporally resolved excess carrier concentrations in the n-base of electron irradiated, low doped, highly injected p-i-n type diodes, the effective ambipolar lifetime has been extracted with respect to different injection levels and temperat...
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| Veröffentlicht in: | Journal of applied physics 1997-03, Vol.81 (5), p.2256-2262 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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