High domain wall magneto-resistance in amorphous TbFeCo wires

High domain wall magneto-resistance in amorphous TbFeCo wires

By introducing artificial pinning sites to locally modify coercivity in perpendicularly magnetized TbFeCo wires, strip domains were constructed without expense of specimen damage. The construction of strip domains with well-defined shape and controllable number enables a determination of magneto-res...

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Veröffentlicht in:Applied physics letters 2011-09, Vol.99 (12), p.122501-122501-3
Hauptverfasser: Li, Songtian, Amagai, Taro, Liu, Xiaoxi, Morisako, Akimistu
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container_title Applied physics letters
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creator Li, Songtian
Amagai, Taro
Liu, Xiaoxi
Morisako, Akimistu
description By introducing artificial pinning sites to locally modify coercivity in perpendicularly magnetized TbFeCo wires, strip domains were constructed without expense of specimen damage. The construction of strip domains with well-defined shape and controllable number enables a determination of magneto-resistance contributing from singe domain wall. Contrast to crystalline materials, a rather high domain wall magneto-resistance ratio near 20% was found at room temperature, indicating the amorphous TbFeCo is a potential candidate for spintronic devices.
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title High domain wall magneto-resistance in amorphous TbFeCo wires
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