High temperature behavior of Pt and Pd on GaN

We report on the thermal stability of Pt and Pd thin films on GaN up to 800 °C. We have found that for Pt thin films submicron size metal spheres form at temperatures as low as 600 °C and the film turns into discontinuous islands at 725 °C and above. Pd begins to form islands above 700 °C and areas...

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Veröffentlicht in:	Journal of Applied Physics 1997-04, Vol.81 (7), p.3134-3137
Hauptverfasser:	Duxstad, K. J., Haller, E. E., Yu, K. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	DEPOSITION ELECTRIC CONTACTS GALLIUM NITRIDES GRAIN SIZE INTERFACES MATERIALS SCIENCE MICROSTRUCTURE PALLADIUM PLATINUM SCHOTTKY BARRIER DIODES STABILITY SURFACE COATING TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0400-1000 K THERMAL STRESSES THIN FILMS
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container_title	Journal of Applied Physics
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creator	Duxstad, K. J. Haller, E. E. Yu, K. M.
description	We report on the thermal stability of Pt and Pd thin films on GaN up to 800 °C. We have found that for Pt thin films submicron size metal spheres form at temperatures as low as 600 °C and the film turns into discontinuous islands at 725 °C and above. Pd begins to form islands above 700 °C and areas of the film begin to delaminate due to thermally generated compressive stress. The general behavior of these films is that found for most metal films on ceramics, suggesting that metals on GaN do not react as they typically do on common elemental and compound semiconductors. This ceramic-like behavior must be considered when determining which metals may act as good electrical contacts for GaN, especially for high temperature applications or alloyed contacts.
doi_str_mv	10.1063/1.364091
format	Article
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This ceramic-like behavior must be considered when determining which metals may act as good electrical contacts for GaN, especially for high temperature applications or alloyed contacts.</description><subject>DEPOSITION</subject><subject>ELECTRIC CONTACTS</subject><subject>GALLIUM NITRIDES</subject><subject>GRAIN SIZE</subject><subject>INTERFACES</subject><subject>MATERIALS SCIENCE</subject><subject>MICROSTRUCTURE</subject><subject>PALLADIUM</subject><subject>PLATINUM</subject><subject>SCHOTTKY BARRIER DIODES</subject><subject>STABILITY</subject><subject>SURFACE COATING</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>THERMAL STRESSES</subject><subject>THIN FILMS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNotkMFKxDAURYMoWEfBT4g7Nx3fS5qmWcqgM8Kgs9B1eE1TW3GaIYmCf-9IXV24HM7iMHaNsESo5R0uZV2BwRNWIDSm1ErBKSsABJaN0eacXaT0AYDYSFOwcjO-Dzz7_cFHyl_R89YP9D2GyEPPd5nT1PFdx8PE1_R8yc56-kz-6n8X7O3x4XW1Kbcv66fV_bZ0EnUuqfKyhwY7X3sptRaVQ1OB0po0ubamVjsSrei7tnU1Cq0b8HS8lSDTO5ILdjN7Q8qjTW7M3g0uTJN32SqptFBH5nZmXAwpRd_bQxz3FH8sgv1LYdHOKeQvBG1Okg</recordid><startdate>19970401</startdate><enddate>19970401</enddate><creator>Duxstad, K. 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M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-a4e3f081de6e337724c1940577a7acb6ab7ca2b2fdbbc6127780ea6ab52a9fca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>DEPOSITION</topic><topic>ELECTRIC CONTACTS</topic><topic>GALLIUM NITRIDES</topic><topic>GRAIN SIZE</topic><topic>INTERFACES</topic><topic>MATERIALS SCIENCE</topic><topic>MICROSTRUCTURE</topic><topic>PALLADIUM</topic><topic>PLATINUM</topic><topic>SCHOTTKY BARRIER DIODES</topic><topic>STABILITY</topic><topic>SURFACE COATING</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE 0400-1000 K</topic><topic>THERMAL STRESSES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Duxstad, K. J.</creatorcontrib><creatorcontrib>Haller, E. E.</creatorcontrib><creatorcontrib>Yu, K. 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We have found that for Pt thin films submicron size metal spheres form at temperatures as low as 600 °C and the film turns into discontinuous islands at 725 °C and above. Pd begins to form islands above 700 °C and areas of the film begin to delaminate due to thermally generated compressive stress. The general behavior of these films is that found for most metal films on ceramics, suggesting that metals on GaN do not react as they typically do on common elemental and compound semiconductors. This ceramic-like behavior must be considered when determining which metals may act as good electrical contacts for GaN, especially for high temperature applications or alloyed contacts.</abstract><cop>United States</cop><doi>10.1063/1.364091</doi><tpages>4</tpages></addata></record>
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title	High temperature behavior of Pt and Pd on GaN
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