Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1997-01, Vol.81 (1), p.211-219
Hauptverfasser:	Kamins, T. I., Carr, E. C., Williams, R. S., Rosner, S. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!