Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“...

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Veröffentlicht in:Journal of applied physics 1997-01, Vol.81 (1), p.211-219
Hauptverfasser: Kamins, T. I., Carr, E. C., Williams, R. S., Rosner, S. J.
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container_title Journal of applied physics
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creator Kamins, T. I.
Carr, E. C.
Williams, R. S.
Rosner, S. J.
description This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“wetting’’ layer) formation; (2) three-dimensional island growth with a constant aspect ratio; (3) continued island growth with a constant diameter and increasing height; (4) rapid growth of larger, faceted islands. Ostwald ripening of the islands during continued heat treatment after terminating the deposition is slow compared to island formation and growth during deposition for the experimental conditions used.
doi_str_mv 10.1063/1.364084
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_364084</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_364084</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-962d5d42002dfe244998028d5ec04c5eab81a22074b15d4726b23ce531052c543</originalsourceid><addsrcrecordid>eNpFkE9LAzEQxYMoWKvgR8ixHrZO_u0mR6m2CgUP6nnJJrNspNtdkq3Sb2-kgjDMwPB7j8cj5JbBkkEp7tlSlBK0PCMzBtoUlVJwTmYAnBXaVOaSXKX0CcCYFmZGvh9xHFKYwrCnQ0unLiIWPvS4T_lld3SDNKSd3ftEM_IWFll6R5sjdR32wWXiy45DpP7fx055-iGNHcbgaNbSiP7g0NMxYkqHvK7JRWt3CW_-7px8rJ_eV8_F9nXzsnrYFo4bNhWm5F55yXN83yKX0hgNXHuFDqRTaBvNLOdQyYZlruJlw4VDJRgo7pQUc7I4-bo4pBSxrccYehuPNYP6t7Ca1afCxA_wYV1W</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures</title><source>AIP Digital Archive</source><creator>Kamins, T. I. ; Carr, E. C. ; Williams, R. S. ; Rosner, S. J.</creator><creatorcontrib>Kamins, T. I. ; Carr, E. C. ; Williams, R. S. ; Rosner, S. J.</creatorcontrib><description>This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“wetting’’ layer) formation; (2) three-dimensional island growth with a constant aspect ratio; (3) continued island growth with a constant diameter and increasing height; (4) rapid growth of larger, faceted islands. Ostwald ripening of the islands during continued heat treatment after terminating the deposition is slow compared to island formation and growth during deposition for the experimental conditions used.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.364084</identifier><language>eng</language><ispartof>Journal of applied physics, 1997-01, Vol.81 (1), p.211-219</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-962d5d42002dfe244998028d5ec04c5eab81a22074b15d4726b23ce531052c543</citedby><cites>FETCH-LOGICAL-c291t-962d5d42002dfe244998028d5ec04c5eab81a22074b15d4726b23ce531052c543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Kamins, T. I.</creatorcontrib><creatorcontrib>Carr, E. C.</creatorcontrib><creatorcontrib>Williams, R. S.</creatorcontrib><creatorcontrib>Rosner, S. J.</creatorcontrib><title>Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures</title><title>Journal of applied physics</title><description>This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“wetting’’ layer) formation; (2) three-dimensional island growth with a constant aspect ratio; (3) continued island growth with a constant diameter and increasing height; (4) rapid growth of larger, faceted islands. Ostwald ripening of the islands during continued heat treatment after terminating the deposition is slow compared to island formation and growth during deposition for the experimental conditions used.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LAzEQxYMoWKvgR8ixHrZO_u0mR6m2CgUP6nnJJrNspNtdkq3Sb2-kgjDMwPB7j8cj5JbBkkEp7tlSlBK0PCMzBtoUlVJwTmYAnBXaVOaSXKX0CcCYFmZGvh9xHFKYwrCnQ0unLiIWPvS4T_lld3SDNKSd3ftEM_IWFll6R5sjdR32wWXiy45DpP7fx055-iGNHcbgaNbSiP7g0NMxYkqHvK7JRWt3CW_-7px8rJ_eV8_F9nXzsnrYFo4bNhWm5F55yXN83yKX0hgNXHuFDqRTaBvNLOdQyYZlruJlw4VDJRgo7pQUc7I4-bo4pBSxrccYehuPNYP6t7Ca1afCxA_wYV1W</recordid><startdate>19970101</startdate><enddate>19970101</enddate><creator>Kamins, T. I.</creator><creator>Carr, E. C.</creator><creator>Williams, R. S.</creator><creator>Rosner, S. J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19970101</creationdate><title>Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures</title><author>Kamins, T. I. ; Carr, E. C. ; Williams, R. S. ; Rosner, S. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-962d5d42002dfe244998028d5ec04c5eab81a22074b15d4726b23ce531052c543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kamins, T. I.</creatorcontrib><creatorcontrib>Carr, E. C.</creatorcontrib><creatorcontrib>Williams, R. S.</creatorcontrib><creatorcontrib>Rosner, S. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kamins, T. I.</au><au>Carr, E. C.</au><au>Williams, R. S.</au><au>Rosner, S. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures</atitle><jtitle>Journal of applied physics</jtitle><date>1997-01-01</date><risdate>1997</risdate><volume>81</volume><issue>1</issue><spage>211</spage><epage>219</epage><pages>211-219</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“wetting’’ layer) formation; (2) three-dimensional island growth with a constant aspect ratio; (3) continued island growth with a constant diameter and increasing height; (4) rapid growth of larger, faceted islands. Ostwald ripening of the islands during continued heat treatment after terminating the deposition is slow compared to island formation and growth during deposition for the experimental conditions used.</abstract><doi>10.1063/1.364084</doi><tpages>9</tpages></addata></record>
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title Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T11%3A37%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Deposition%20of%20three-dimensional%20Ge%20islands%20on%20Si(001)%20by%20chemical%20vapor%20deposition%20at%20atmospheric%20and%20reduced%20pressures&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Kamins,%20T.%20I.&rft.date=1997-01-01&rft.volume=81&rft.issue=1&rft.spage=211&rft.epage=219&rft.pages=211-219&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.364084&rft_dat=%3Ccrossref%3E10_1063_1_364084%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true