Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

The effect of body thickness (5-13 nm) on the leakage currents of top-gated, InAs-on-insulator field-effect-transistors with a channel length of ∼200 nm is explored. From a combination of experiments and simulation, it is found that the OFF-state currents are primarily dominated by Shockley Read Hal...

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Veröffentlicht in:	Applied physics letters 2011-09, Vol.99 (10), p.103507-103507-3
Hauptverfasser:	Takei, Kuniharu, Chuang, Steven, Fang, Hui, Kapadia, Rehan, Liu, Chin-Hung, Nah, Junghyo, Sul Kim, Ha, Plis, E., Krishna, Sanjay, Chueh, Yu-Lun, Javey, Ali
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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