PN junction rectification in electrolyte gated Mg-doped InN

PN junction rectification is demonstrated in indium nitride. The junction is formed between the n -type surface accumulation layer and the Mg-doped, p -type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is controlled by gating with an electrolyte....

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Veröffentlicht in:	Applied physics letters 2011-09, Vol.99 (10), p.102106-102106-3
Hauptverfasser:	Alarcón-Lladó, E., Mayer, M. A., Boudouris, B. W., Segalman, R. A., Miller, N., Yamaguchi, T., Wang, K., Nanishi, Y., Haller, E. E., Ager, J. W.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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