Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB

Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB

The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with...

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Veröffentlicht in:Applied physics letters 2011-09, Vol.99 (10), p.102502-102502-3
Hauptverfasser: Wang, Wei-Gang, Hageman, Stephen, Li, Mingen, Huang, Sunxiang, Kou, Xiaoming, Fan, Xin, Xiao, John Q., Chien, C. L.
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container_end_page 102502-3
container_issue 10
container_start_page 102502
container_title Applied physics letters
container_volume 99
creator Wang, Wei-Gang
Hageman, Stephen
Li, Mingen
Huang, Sunxiang
Kou, Xiaoming
Fan, Xin
Xiao, John Q.
Chien, C. L.
description The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed.
doi_str_mv 10.1063/1.3634026
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title Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
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