Phosphorus-related donors in 6 H -SiC generated by ion implantation
Aluminum-doped 6H-SiC epilayers were implanted with phosphorus and subsequently annealed in a temperature range from 1400 to 1700 °C. The annealing behavior of implanted phosphorus atoms was studied by the Hall effect, admittance spectroscopy, and photoluminescence. Phosphorus acts as a shallow dono...
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Veröffentlicht in: | Journal of applied physics 1996-10, Vol.80 (7), p.3739-3743 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Aluminum-doped 6H-SiC epilayers were implanted with phosphorus and subsequently annealed in a temperature range from 1400 to 1700 °C. The annealing behavior of implanted phosphorus atoms was studied by the Hall effect, admittance spectroscopy, and photoluminescence. Phosphorus acts as a shallow donor. Two ionization energies of (80±5) meV and (110±5) meV are determined, which are assigned to phosphorus atoms residing at hexagonal and cubic lattice sites, respectively. Assuming first-order kinetics, the annealing process results in an activation energy of the phosphorus donors of 2.5 eV. A set of four lines at a wavelength of about 420/421 nm is observed in the low temperature photoluminescence spectra; the intensity of these lines increases in parallel with the electrical activation of phosphorus donors by raising the annealing temperature. It is proposed that these lines are phosphorus-related. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.363325 |