Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study

A negative bias applied to a nondiamond substrate at the initiation of microwave plasma-enhanced chemical-vapor deposition of thin-film diamond can lead to diamond nucleation, high crystalline density, and an improved level of crystallographic alignment. In this work, optical emission spectroscopy h...

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Veröffentlicht in:Journal of applied physics 1996-10, Vol.80 (7), p.3710-3716
Hauptverfasser: Whitfield, Michael D., Jackman, Richard B., Rodway, Don, Savage, James A., Foord, John S.
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container_end_page 3716
container_issue 7
container_start_page 3710
container_title Journal of applied physics
container_volume 80
creator Whitfield, Michael D.
Jackman, Richard B.
Rodway, Don
Savage, James A.
Foord, John S.
description A negative bias applied to a nondiamond substrate at the initiation of microwave plasma-enhanced chemical-vapor deposition of thin-film diamond can lead to diamond nucleation, high crystalline density, and an improved level of crystallographic alignment. In this work, optical emission spectroscopy has been used to study changes in the chemical species within the plasma that occur as a result the applied bias to a tungsten substrate. The ratio of C2 to CH species detected changes considerably as does the atomic hydrogen intensity as the bias is applied. Both effects appear to be greatest near the substrate surface. The results are discussed in terms of possible origins for the bias-enhanced nucleation process.
doi_str_mv 10.1063/1.363321
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_363321</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_363321</sourcerecordid><originalsourceid>FETCH-LOGICAL-c225t-eb66adffad463769a1eb3903d908fdd95895588c6dff9b29afcc63999fa993713</originalsourceid><addsrcrecordid>eNotUMtKAzEUDaJgrYKfkKWbqcnEyeS6K8UXVNzoeriTh43Mi9xU6d87UleHw3nAOYxdS7GSQqtbuVJaqVKesIUUBoq6qsQpWwhRysJADefsguhLCCmNggXLr9Gm8Qe_PZ86pB653WFCm32KlKMl7vYpDp-8jUiFH3Y4WO_4sLedxxzHgY-Bu4j9OLh7vp7pNKew476PRH86Td7mNJIdp2g55b07XLKzgB35q39cso_Hh_fNc7F9e3rZrLeFLcsqF77VGl0I6O60qjWg9K0CoRwIE5yDykBVGWP17IG2BAzWagUAAQFULdWS3Rx754lEyYdmSrHHdGikaP7eamRzfEv9Aq1JX5A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study</title><source>AIP Digital Archive</source><creator>Whitfield, Michael D. ; Jackman, Richard B. ; Rodway, Don ; Savage, James A. ; Foord, John S.</creator><creatorcontrib>Whitfield, Michael D. ; Jackman, Richard B. ; Rodway, Don ; Savage, James A. ; Foord, John S.</creatorcontrib><description>A negative bias applied to a nondiamond substrate at the initiation of microwave plasma-enhanced chemical-vapor deposition of thin-film diamond can lead to diamond nucleation, high crystalline density, and an improved level of crystallographic alignment. In this work, optical emission spectroscopy has been used to study changes in the chemical species within the plasma that occur as a result the applied bias to a tungsten substrate. The ratio of C2 to CH species detected changes considerably as does the atomic hydrogen intensity as the bias is applied. Both effects appear to be greatest near the substrate surface. The results are discussed in terms of possible origins for the bias-enhanced nucleation process.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.363321</identifier><language>eng</language><ispartof>Journal of applied physics, 1996-10, Vol.80 (7), p.3710-3716</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-eb66adffad463769a1eb3903d908fdd95895588c6dff9b29afcc63999fa993713</citedby><cites>FETCH-LOGICAL-c225t-eb66adffad463769a1eb3903d908fdd95895588c6dff9b29afcc63999fa993713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Whitfield, Michael D.</creatorcontrib><creatorcontrib>Jackman, Richard B.</creatorcontrib><creatorcontrib>Rodway, Don</creatorcontrib><creatorcontrib>Savage, James A.</creatorcontrib><creatorcontrib>Foord, John S.</creatorcontrib><title>Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study</title><title>Journal of applied physics</title><description>A negative bias applied to a nondiamond substrate at the initiation of microwave plasma-enhanced chemical-vapor deposition of thin-film diamond can lead to diamond nucleation, high crystalline density, and an improved level of crystallographic alignment. In this work, optical emission spectroscopy has been used to study changes in the chemical species within the plasma that occur as a result the applied bias to a tungsten substrate. The ratio of C2 to CH species detected changes considerably as does the atomic hydrogen intensity as the bias is applied. Both effects appear to be greatest near the substrate surface. The results are discussed in terms of possible origins for the bias-enhanced nucleation process.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNotUMtKAzEUDaJgrYKfkKWbqcnEyeS6K8UXVNzoeriTh43Mi9xU6d87UleHw3nAOYxdS7GSQqtbuVJaqVKesIUUBoq6qsQpWwhRysJADefsguhLCCmNggXLr9Gm8Qe_PZ86pB653WFCm32KlKMl7vYpDp-8jUiFH3Y4WO_4sLedxxzHgY-Bu4j9OLh7vp7pNKew476PRH86Td7mNJIdp2g55b07XLKzgB35q39cso_Hh_fNc7F9e3rZrLeFLcsqF77VGl0I6O60qjWg9K0CoRwIE5yDykBVGWP17IG2BAzWagUAAQFULdWS3Rx754lEyYdmSrHHdGikaP7eamRzfEv9Aq1JX5A</recordid><startdate>19961001</startdate><enddate>19961001</enddate><creator>Whitfield, Michael D.</creator><creator>Jackman, Richard B.</creator><creator>Rodway, Don</creator><creator>Savage, James A.</creator><creator>Foord, John S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19961001</creationdate><title>Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study</title><author>Whitfield, Michael D. ; Jackman, Richard B. ; Rodway, Don ; Savage, James A. ; Foord, John S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-eb66adffad463769a1eb3903d908fdd95895588c6dff9b29afcc63999fa993713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Whitfield, Michael D.</creatorcontrib><creatorcontrib>Jackman, Richard B.</creatorcontrib><creatorcontrib>Rodway, Don</creatorcontrib><creatorcontrib>Savage, James A.</creatorcontrib><creatorcontrib>Foord, John S.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Whitfield, Michael D.</au><au>Jackman, Richard B.</au><au>Rodway, Don</au><au>Savage, James A.</au><au>Foord, John S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study</atitle><jtitle>Journal of applied physics</jtitle><date>1996-10-01</date><risdate>1996</risdate><volume>80</volume><issue>7</issue><spage>3710</spage><epage>3716</epage><pages>3710-3716</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>A negative bias applied to a nondiamond substrate at the initiation of microwave plasma-enhanced chemical-vapor deposition of thin-film diamond can lead to diamond nucleation, high crystalline density, and an improved level of crystallographic alignment. In this work, optical emission spectroscopy has been used to study changes in the chemical species within the plasma that occur as a result the applied bias to a tungsten substrate. The ratio of C2 to CH species detected changes considerably as does the atomic hydrogen intensity as the bias is applied. Both effects appear to be greatest near the substrate surface. The results are discussed in terms of possible origins for the bias-enhanced nucleation process.</abstract><doi>10.1063/1.363321</doi><tpages>7</tpages></addata></record>
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title Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T17%3A20%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Microwave%20plasma%20characteristics%20during%20bias-enhanced%20nucleation%20of%20diamond:%20An%20optical%20emission%20spectroscopic%20study&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Whitfield,%20Michael%20D.&rft.date=1996-10-01&rft.volume=80&rft.issue=7&rft.spage=3710&rft.epage=3716&rft.pages=3710-3716&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.363321&rft_dat=%3Ccrossref%3E10_1063_1_363321%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true