Microwave properties and strain-induced lattice defects of c -axis-oriented YBa2Cu3O7−δ thin films on silicon

Microwave properties and strain-induced lattice defects of c -axis-oriented YBa2Cu3O7−δ thin films on silicon

The microwave properties and the crystal structure of YBa2Cu3O7−δ thin films are examined as a function of film thickness. Already below the critical thickness for the formation of macroscopic fractures, we observe an increase of the residual surface resistance with thickness. Cross-sectional transm...

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Veröffentlicht in:Journal of applied physics 1996-09, Vol.80 (6), p.3488-3492
Hauptverfasser: Jaekel, C., Kyas, G., Roskos, H. G., Kurz, H., Kabius, B., Meertens, D., Prusseit, W., Utz, B.
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container_end_page 3492
container_issue 6
container_start_page 3488
container_title Journal of applied physics
container_volume 80
creator Jaekel, C.
Kyas, G.
Roskos, H. G.
Kurz, H.
Kabius, B.
Meertens, D.
Prusseit, W.
Utz, B.
description The microwave properties and the crystal structure of YBa2Cu3O7−δ thin films are examined as a function of film thickness. Already below the critical thickness for the formation of macroscopic fractures, we observe an increase of the residual surface resistance with thickness. Cross-sectional transmission electron microscopy reveals that this behavior is caused by structural changes of antiphase boundaries leading to normal-conducting regions between superconducting grains. The surface resistance is calculated within the weak-link picture.
doi_str_mv 10.1063/1.363220
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title Microwave properties and strain-induced lattice defects of c -axis-oriented YBa2Cu3O7−δ thin films on silicon
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