Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy

Finite element (FE) analysis and transmission electron microscopy (TEM) observations have been used to model stress relaxation in InAs quantum dots deposited on (001) GaAs. TEM observations show that these islands are coherently strained and the corresponding strain contrast is simulated using the d...

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Veröffentlicht in:	Journal of applied physics 1996-09, Vol.80 (5), p.2763-2767
Hauptverfasser:	Benabbas, T., François, P., Androussi, Y., Lefebvre, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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