Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction

The electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct (P3HT:ICBA) blend is investigated with direct and inverse photoemission spectroscopy. The energy gap between the lowest unoccupied molecular orbital (LUMO) of ICBA and the highest occupied molecular orbital (HOMO) of P3HT, w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2011-08, Vol.110 (4)
Hauptverfasser: Guan, Ze-Lei, Bok Kim, Jong, Loo, Yueh-Lin, Kahn, Antoine
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 4
container_start_page
container_title Journal of applied physics
container_volume 110
creator Guan, Ze-Lei
Bok Kim, Jong
Loo, Yueh-Lin
Kahn, Antoine
description The electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct (P3HT:ICBA) blend is investigated with direct and inverse photoemission spectroscopy. The energy gap between the lowest unoccupied molecular orbital (LUMO) of ICBA and the highest occupied molecular orbital (HOMO) of P3HT, which is central to the performance of photovoltaic cells made with this blend, is found equal to 1.68 eV. This value is larger than the difference between the ionization energy of the donor and the electron affinity of the acceptor, implying the existence of an interface dipole barrier between these two materials. Complementary contact potential difference measurements are done with a Kelvin probe in the dark on similar donor/acceptor pairs, e.g., P3HT:C60 and copper phthalocyanine (CuPc):C60, and confirm the existence of a dipole at these interfaces. It is estimated that a 0.3–0.4 eV ground state dipole exists at the P3HT:ICBA interface.
doi_str_mv 10.1063/1.3626938
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3626938</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3626938</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-f533611121e0553fe36aa6bbae6eff5114bba65a698b819944ecef824e0c76483</originalsourceid><addsrcrecordid>eNotkL1OwzAURi0EEqUw8AYe6eDiG8euzYaq8iNVYoGJIXKcayUlxJHtSPTtCaLT-ZbvDIeQW-Br4Ercw1qoQhmhz8gCuDZsIyU_JwvOC2DabMwluUrpwDmAFmZBPnc9uhzD0DmacpxcniLS4GlukY6hP94J1uLPsc9tF8YWB1w9dEMzk20Vp3WXbNPML1pP_RdtMWMMh2lwuQvDNbnwtk94c-KSfDzt3rcvbP_2_Lp93DNXGJmZl0IoACgAuZTCo1DWqrq2qNB7CVDOW0mrjK41GFOW6NDrokTuNqrUYklW_14XQ0oRfTXG7tvGYwW8-qtSQXWqIn4BLN9VRA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Guan, Ze-Lei ; Bok Kim, Jong ; Loo, Yueh-Lin ; Kahn, Antoine</creator><creatorcontrib>Guan, Ze-Lei ; Bok Kim, Jong ; Loo, Yueh-Lin ; Kahn, Antoine</creatorcontrib><description>The electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct (P3HT:ICBA) blend is investigated with direct and inverse photoemission spectroscopy. The energy gap between the lowest unoccupied molecular orbital (LUMO) of ICBA and the highest occupied molecular orbital (HOMO) of P3HT, which is central to the performance of photovoltaic cells made with this blend, is found equal to 1.68 eV. This value is larger than the difference between the ionization energy of the donor and the electron affinity of the acceptor, implying the existence of an interface dipole barrier between these two materials. Complementary contact potential difference measurements are done with a Kelvin probe in the dark on similar donor/acceptor pairs, e.g., P3HT:C60 and copper phthalocyanine (CuPc):C60, and confirm the existence of a dipole at these interfaces. It is estimated that a 0.3–0.4 eV ground state dipole exists at the P3HT:ICBA interface.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3626938</identifier><language>eng</language><ispartof>Journal of applied physics, 2011-08, Vol.110 (4)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-f533611121e0553fe36aa6bbae6eff5114bba65a698b819944ecef824e0c76483</citedby><cites>FETCH-LOGICAL-c295t-f533611121e0553fe36aa6bbae6eff5114bba65a698b819944ecef824e0c76483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Guan, Ze-Lei</creatorcontrib><creatorcontrib>Bok Kim, Jong</creatorcontrib><creatorcontrib>Loo, Yueh-Lin</creatorcontrib><creatorcontrib>Kahn, Antoine</creatorcontrib><title>Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction</title><title>Journal of applied physics</title><description>The electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct (P3HT:ICBA) blend is investigated with direct and inverse photoemission spectroscopy. The energy gap between the lowest unoccupied molecular orbital (LUMO) of ICBA and the highest occupied molecular orbital (HOMO) of P3HT, which is central to the performance of photovoltaic cells made with this blend, is found equal to 1.68 eV. This value is larger than the difference between the ionization energy of the donor and the electron affinity of the acceptor, implying the existence of an interface dipole barrier between these two materials. Complementary contact potential difference measurements are done with a Kelvin probe in the dark on similar donor/acceptor pairs, e.g., P3HT:C60 and copper phthalocyanine (CuPc):C60, and confirm the existence of a dipole at these interfaces. It is estimated that a 0.3–0.4 eV ground state dipole exists at the P3HT:ICBA interface.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAURi0EEqUw8AYe6eDiG8euzYaq8iNVYoGJIXKcayUlxJHtSPTtCaLT-ZbvDIeQW-Br4Ercw1qoQhmhz8gCuDZsIyU_JwvOC2DabMwluUrpwDmAFmZBPnc9uhzD0DmacpxcniLS4GlukY6hP94J1uLPsc9tF8YWB1w9dEMzk20Vp3WXbNPML1pP_RdtMWMMh2lwuQvDNbnwtk94c-KSfDzt3rcvbP_2_Lp93DNXGJmZl0IoACgAuZTCo1DWqrq2qNB7CVDOW0mrjK41GFOW6NDrokTuNqrUYklW_14XQ0oRfTXG7tvGYwW8-qtSQXWqIn4BLN9VRA</recordid><startdate>20110815</startdate><enddate>20110815</enddate><creator>Guan, Ze-Lei</creator><creator>Bok Kim, Jong</creator><creator>Loo, Yueh-Lin</creator><creator>Kahn, Antoine</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110815</creationdate><title>Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction</title><author>Guan, Ze-Lei ; Bok Kim, Jong ; Loo, Yueh-Lin ; Kahn, Antoine</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-f533611121e0553fe36aa6bbae6eff5114bba65a698b819944ecef824e0c76483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guan, Ze-Lei</creatorcontrib><creatorcontrib>Bok Kim, Jong</creatorcontrib><creatorcontrib>Loo, Yueh-Lin</creatorcontrib><creatorcontrib>Kahn, Antoine</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guan, Ze-Lei</au><au>Bok Kim, Jong</au><au>Loo, Yueh-Lin</au><au>Kahn, Antoine</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction</atitle><jtitle>Journal of applied physics</jtitle><date>2011-08-15</date><risdate>2011</risdate><volume>110</volume><issue>4</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct (P3HT:ICBA) blend is investigated with direct and inverse photoemission spectroscopy. The energy gap between the lowest unoccupied molecular orbital (LUMO) of ICBA and the highest occupied molecular orbital (HOMO) of P3HT, which is central to the performance of photovoltaic cells made with this blend, is found equal to 1.68 eV. This value is larger than the difference between the ionization energy of the donor and the electron affinity of the acceptor, implying the existence of an interface dipole barrier between these two materials. Complementary contact potential difference measurements are done with a Kelvin probe in the dark on similar donor/acceptor pairs, e.g., P3HT:C60 and copper phthalocyanine (CuPc):C60, and confirm the existence of a dipole at these interfaces. It is estimated that a 0.3–0.4 eV ground state dipole exists at the P3HT:ICBA interface.</abstract><doi>10.1063/1.3626938</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2011-08, Vol.110 (4)
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_3626938
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Electronic structure of the poly(3-hexylthiophene):indene-C60 bisadduct bulk heterojunction
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T14%3A52%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electronic%20structure%20of%20the%20poly(3-hexylthiophene):indene-C60%20bisadduct%20bulk%20heterojunction&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Guan,%20Ze-Lei&rft.date=2011-08-15&rft.volume=110&rft.issue=4&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.3626938&rft_dat=%3Ccrossref%3E10_1063_1_3626938%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true