Elastic properties of porous low-k dielectric nano-films

Low-k dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric for interconnects in state of the art integrated circuits. In order to further reduce interconnect RC delays, additional reductions in k for these low-k materials are being pursued via the introduction of cont...

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Veröffentlicht in:	Journal of applied physics 2011-08, Vol.110 (4), p.043520-043520-8
Hauptverfasser:	Zhou, W., Bailey, S., Sooryakumar, R., King, S., Xu, G., Mays, E., Ege, C., Bielefeld, J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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