Efficiency enhancement of a-Si:H single junction solar cells by a-Ge:H incorporation at the p + a-SiC:H/transparent conducting oxide interface

Carbon (C) incorporation in the p + hydrogenated amorphous silicon (a-SiC:H) is highly desirable for a-Si:H based solar cells because of the following reasons: (i) it increases the band gap of the p + layer to ∼2 eV, which allows a majority of the sun light to pass through the thin p + layer (∼15 nm...

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Veröffentlicht in:	Applied physics letters 2011-08, Vol.99 (6), p.062102-062102-3
Hauptverfasser:	Kim, Jeehwan, Abou-Kandil, Ahmed I., Hong, Augustin J., Saad, Mohamed M., Sadana, Devendra K., Chen, Tze-Chiang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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