In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga0....

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Veröffentlicht in:Applied physics letters 2011-07, Vol.99 (4)
Hauptverfasser: Milojevic, M., Contreras-Guerrero, R., O’Connor, E., Brennan, B., Hurley, P. K., Kim, J., Hinkle, C. L., Wallace, R. M.
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container_issue 4
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container_title Applied physics letters
container_volume 99
creator Milojevic, M.
Contreras-Guerrero, R.
O’Connor, E.
Brennan, B.
Hurley, P. K.
Kim, J.
Hinkle, C. L.
Wallace, R. M.
description Ga2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 °C and substrate temperature of 425 °C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the “clean-up” effect following TMA exposures causing As-As bonding formation resulting in a high interface state density.
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title In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition
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