High-dose phenomena in zinc-implanted silicon crystals

The structure of (100) silicon implanted with Zn+ ions at an energy of 50 keV was studied. The ion doses were varied from 1×1015 to 1×1017 cm−2 and the beam current density was 10 μA cm−2. The analytical techniques employed for sample characterization included cross-sectional transmission electron m...

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Veröffentlicht in:Journal of applied physics 1996-04, Vol.79 (7), p.3470-3476
Hauptverfasser: Simov, S., Kalitzova, M., Karpuzov, D., Yankov, R., Angelov, Ch, Faure, J., Bonhomme, P., Balossier, G.
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container_end_page 3476
container_issue 7
container_start_page 3470
container_title Journal of applied physics
container_volume 79
creator Simov, S.
Kalitzova, M.
Karpuzov, D.
Yankov, R.
Angelov, Ch
Faure, J.
Bonhomme, P.
Balossier, G.
description The structure of (100) silicon implanted with Zn+ ions at an energy of 50 keV was studied. The ion doses were varied from 1×1015 to 1×1017 cm−2 and the beam current density was 10 μA cm−2. The analytical techniques employed for sample characterization included cross-sectional transmission electron microscopy and x-ray energy dispersion analysis. The energy deposition of the ion beam was calculated by using computer simulation codes. For the two lower doses of 1×1015 and 1×1016 a crystalline-to-amorphous transformation was observed in the implanted layer and this was correlated with the thermal history of the implants and the attendant changes in morphology. In contrast, an amorphous-to-crystalline transition was found to occur at higher doses, namely 5×1016 and 1×1017, where the formation of a complex, structured layer consisting of an amorphous phase mixed with crystalline grains of Zn and partly recrystallized Si was identified together with other specific structural features. Detailed characterization of the resulting microstructures was carried out taking into account the effects of sample heating, ion-beam-induced amorphization, crystallization, and sputtering.
doi_str_mv 10.1063/1.361395
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title High-dose phenomena in zinc-implanted silicon crystals
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