Origin of the charge carriers accumulation/depletion in porous silicon contacted by a liquid phase

The origin of the electronic free charge carriers accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidences, supported by quantitative considerations, show that the porous sil...

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Veröffentlicht in:Journal of applied physics 1996-03, Vol.79 (5), p.2513-2516
Hauptverfasser: Bsiesy, A., Gelloz, B., Gaspard, F., Muller, F.
Format: Artikel
Sprache:eng
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Zusammenfassung:The origin of the electronic free charge carriers accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidences, supported by quantitative considerations, show that the porous silicon can be conductive if the free charge carriers flux supplied by the substrate is not the rate determining step of the electrical current conduction.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.361180