Origin of the charge carriers accumulation/depletion in porous silicon contacted by a liquid phase
The origin of the electronic free charge carriers accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidences, supported by quantitative considerations, show that the porous sil...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 1996-03, Vol.79 (5), p.2513-2516 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The origin of the electronic free charge carriers accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidences, supported by quantitative considerations, show that the porous silicon can be conductive if the free charge carriers flux supplied by the substrate is not the rate determining step of the electrical current conduction. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.361180 |