Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation
The effect of rapid thermal annealing at 1200 °C as a pretreatment on the precipitation of oxygen during a three-step internal gettering process is studied thanks to infrared analyses. The influence of both the duration and the ambient of this pretreatment is considered. We define a limit duration o...
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| Veröffentlicht in: | Journal of applied physics 1996-03, Vol.79 (5), p.2707-2711 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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