A new field-effect transistor based on the metal–insulator transition

We propose a field-effect tunnel transistor based on the metal–insulator transition. The principle of the switching is the metal–insulator transition, which occurs at the sheet resistance RQ (∼h/e2=25.8 kΩ). The modulation of the sheet resistance around RQ by the control gates can be magnified by th...

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Veröffentlicht in:	Journal of applied physics 1996-03, Vol.79 (5), p.2542-2548
Hauptverfasser:	Katayama, Kozo, Hisamoto, Digh, Nakamura, Yoshitaka, Kobayashi, Nobuyoshi, Nagai, Ryo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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