Characteristics of light-emitting diodes based on GaN p - n junctions grown by plasma-assisted molecular beam epitaxy

We report on the fabrication and physics of mesa-etched light-emitting diodes (LEDs) made from GaN p-n junctions grown by molecular beam epitaxy. Rapid thermal annealing was found to improve the electrical properties of these LEDs. Annealed LEDs turn on at 4 V, exhibit an on-series resistance of app...

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Veröffentlicht in:	Journal of applied physics 1996-03, Vol.79 (5), p.2779-2783
Hauptverfasser:	Vaudo, R. P., Goepfert, I. D., Moustakas, T. D., Beyea, D. M., Frey, T. J., Meehan, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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