Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy

In this Letter, x-ray photoelectron spectroscopy (XPS) was used to investigate electronic structures of HfO2 with various thicknesses on SiO2/Si substrate prepared by atomic layer deposition with post deposition annealing of 600 °C, which is compatible with a gate last process in the fabrication of...

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Veröffentlicht in:	Applied physics letters 2011-07, Vol.99 (1)
Hauptverfasser:	Duan, T. L., Yu, H. Y., Wu, L., Wang, Z. R., Foo, Y. L., Pan, J. S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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