Design evaluation of graphene nanoribbon nanoelectromechanical devices
Computational studies on nanoelectromechanical switches based on bilayer graphene nanoribbons (BGNRs) with different designs are presented in this work. By varying the interlayer distance via electrostatic means, the conductance of the BGNR can be changed in order to achieve ON-states and OFF-states...
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Veröffentlicht in: | Journal of applied physics 2011-07, Vol.110 (2), p.024302-024302-6 |
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creator | Lam, Kai-Tak Stephen Leo, Marie Lee, Chengkuo Liang, Gengchiau |
description | Computational studies on nanoelectromechanical switches based on bilayer graphene nanoribbons (BGNRs) with different designs are presented in this work. By varying the interlayer distance via electrostatic means, the conductance of the BGNR can be changed in order to achieve ON-states and OFF-states, thereby mimicking the function of a switch. Two actuator designs based on the modified capacitive parallel plate (CPP) model and the electrostatic repulsive force (ERF) model are discussed for different applications. Although the CPP design provides a simple electrostatic approach to changing the interlayer distance of the BGNR, their switching gate bias
V
TH
strongly depends on the gate area, which poses a limitation on the size of the device. In addition, there exists a risk of device failure due to static fraction between the mobile and fixed electrodes. In contrast, the ERF design can circumvent both issues with a more complex structure. Finally, optimizations of the devices are carried out in order to provide insights into the design considerations of these nanoelectromechanical switches. |
doi_str_mv | 10.1063/1.3606578 |
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V
TH
strongly depends on the gate area, which poses a limitation on the size of the device. In addition, there exists a risk of device failure due to static fraction between the mobile and fixed electrodes. In contrast, the ERF design can circumvent both issues with a more complex structure. Finally, optimizations of the devices are carried out in order to provide insights into the design considerations of these nanoelectromechanical switches.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3606578</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2011-07, Vol.110 (2), p.024302-024302-6</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-e3999485dd1339c61b2f0d2e99bcfd7b5620435a23272a880317eca95e2f6a0a3</citedby><cites>FETCH-LOGICAL-c284t-e3999485dd1339c61b2f0d2e99bcfd7b5620435a23272a880317eca95e2f6a0a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3606578$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Lam, Kai-Tak</creatorcontrib><creatorcontrib>Stephen Leo, Marie</creatorcontrib><creatorcontrib>Lee, Chengkuo</creatorcontrib><creatorcontrib>Liang, Gengchiau</creatorcontrib><title>Design evaluation of graphene nanoribbon nanoelectromechanical devices</title><title>Journal of applied physics</title><description>Computational studies on nanoelectromechanical switches based on bilayer graphene nanoribbons (BGNRs) with different designs are presented in this work. By varying the interlayer distance via electrostatic means, the conductance of the BGNR can be changed in order to achieve ON-states and OFF-states, thereby mimicking the function of a switch. Two actuator designs based on the modified capacitive parallel plate (CPP) model and the electrostatic repulsive force (ERF) model are discussed for different applications. Although the CPP design provides a simple electrostatic approach to changing the interlayer distance of the BGNR, their switching gate bias
V
TH
strongly depends on the gate area, which poses a limitation on the size of the device. In addition, there exists a risk of device failure due to static fraction between the mobile and fixed electrodes. In contrast, the ERF design can circumvent both issues with a more complex structure. Finally, optimizations of the devices are carried out in order to provide insights into the design considerations of these nanoelectromechanical switches.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLAzEQhYMoWKsH_8FePWydJJvd5CJItSoUvOg5zGYnbWS7W5K14L-37RY8eZrH8PHgfYzdcphxKOU9n8kSSlXpMzbhoE1eKQXnbAIgeK5NZS7ZVUpfAJxraSZs8UQprLqMdth-4xD6Lut9toq4XVNHWYddH0Nd79-HSC25IfYbcmvsgsM2a2gXHKVrduGxTXRzulP2uXj-mL_my_eXt_njMndCF0NO0hhTaNU0XErjSl4LD40gY2rnm6pWpYBCKhRSVAK1BskrcmgUCV8ioJyyu7HXxT6lSN5uY9hg_LEc7EGA5fYkYM8-jGxyYThO-x8eLdg_C7b38hcRq2Ny</recordid><startdate>20110715</startdate><enddate>20110715</enddate><creator>Lam, Kai-Tak</creator><creator>Stephen Leo, Marie</creator><creator>Lee, Chengkuo</creator><creator>Liang, Gengchiau</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110715</creationdate><title>Design evaluation of graphene nanoribbon nanoelectromechanical devices</title><author>Lam, Kai-Tak ; Stephen Leo, Marie ; Lee, Chengkuo ; Liang, Gengchiau</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-e3999485dd1339c61b2f0d2e99bcfd7b5620435a23272a880317eca95e2f6a0a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lam, Kai-Tak</creatorcontrib><creatorcontrib>Stephen Leo, Marie</creatorcontrib><creatorcontrib>Lee, Chengkuo</creatorcontrib><creatorcontrib>Liang, Gengchiau</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lam, Kai-Tak</au><au>Stephen Leo, Marie</au><au>Lee, Chengkuo</au><au>Liang, Gengchiau</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design evaluation of graphene nanoribbon nanoelectromechanical devices</atitle><jtitle>Journal of applied physics</jtitle><date>2011-07-15</date><risdate>2011</risdate><volume>110</volume><issue>2</issue><spage>024302</spage><epage>024302-6</epage><pages>024302-024302-6</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Computational studies on nanoelectromechanical switches based on bilayer graphene nanoribbons (BGNRs) with different designs are presented in this work. By varying the interlayer distance via electrostatic means, the conductance of the BGNR can be changed in order to achieve ON-states and OFF-states, thereby mimicking the function of a switch. Two actuator designs based on the modified capacitive parallel plate (CPP) model and the electrostatic repulsive force (ERF) model are discussed for different applications. Although the CPP design provides a simple electrostatic approach to changing the interlayer distance of the BGNR, their switching gate bias
V
TH
strongly depends on the gate area, which poses a limitation on the size of the device. In addition, there exists a risk of device failure due to static fraction between the mobile and fixed electrodes. In contrast, the ERF design can circumvent both issues with a more complex structure. Finally, optimizations of the devices are carried out in order to provide insights into the design considerations of these nanoelectromechanical switches.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3606578</doi></addata></record> |
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title | Design evaluation of graphene nanoribbon nanoelectromechanical devices |
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